2004. 05. 21 1/2 semiconductor technical data PZTA42 epitaxial planar npn transistor revision no : 0 high voltage application. telephone application. features complementary to pzta92. maximum rating (ta=25 ) + _ 6.5 0.2 + _ + _ + _ a 1 123 3 2 sot-223 l k g j h d f e b c 0.26+0.09/-0.02 10 max 0.1 max 1.75 0.25 3.0+0.15/-0.1 2.3 typ 7 0.3 0.7+0.15/-0.1 1.8 max 3.5 0.2 dim millimeters h e b j f f g k l c d a 1. base 2. collector (heat sink) 3. emitter electrical characteristics (ta=25 ) *pulse test : pulse width 300 s, duty cycle 2.0% * package mounted on fr-4 pcb 36 18 1.5mm. : mountina pad for the collector lead min.6cm 2 characteristic symbol test condition min. typ. max. unit collector-base breakdown voltage v (br)cbo i c =100 a, i e =0 300 - - v collector-emitter breakdown voltage v (be)ceo i c =1.0ma, i b =0 300 - - v dc current gain * h fe i c =1.0ma, v ce =10v 40 - - i c =10ma, v ce =10v 40 - - i c =30ma, v ce =10v 40 - - collector-emitter saturation voltage v ce(sat) i c =20ma, i b =2.0ma - - 0.5 v base-emitter saturation voltage v be(sat) i c =20ma, i b =2.0ma - - 0.9 v transition frequency f t v ce =20v, i c =10ma, f=100mhz 50 - - mhz collector output capacitance c ob v cb =20v, i e =0, f=1mhz - - 3.0 pf characteristic symbol rating unit collector-base voltage v cbo 300 v collector-emitter voltage v ceo 300 v emitter-base voltage v ebo 5.0 v collector current i c 500 ma emitter current i e -500 ma collector power dissipation p c * 1 w junction temperature t j 150 storage temperature t stg -55 150 type name marking lot no. PZTA42
2004. 05. 21 2/2 PZTA42 revision no : 0
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